This project has received funding from the European Union’s Horizon 2020 Research and Innovation Programme under Grant Agreement No 101004274

Interview with EleGaNT project coordinator

Published by Fabien Marty on

Interview with Mr Stefaan Decoutere, project coordinator of EleGaNT : IMEC’s Ganic roadmap

Following the publication on IMEC’s extended GaN-IC platform at International Electron Devices Meeting (IEDM), Mr Stefaan Decoutere, Program Director at IMEC, was interviewed by EDACafé this january 2022. This interview presents how EleGaNT’s GaN-IC platform is evolving and how this major update, carried out in parallel with EleGaNT project, would further benefit to the latter.

Indeed, IMEC has achieved the co-integration of a low-voltage and high-voltage Schottky diodes (proprietary Gate-Edge-Termination Schottky Barrier Diodes – GET-SBD) with a low-voltage d-mode HEMTs. In this new solution, the d-mode HEMTs replace the resistors in the RTL (Resistor/Transistor Logic) with a current source (that is called DCFL or Direct Coupled FET logic).

This new GaN-IC platform can be used for improving the third quadrant operation of the low-side switch, and for rectification, level shifting, clamping, etc., in various analog blocks.

To learn more about the first results of this co-integration, watch here the full interview of Mr Decoutere.

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