Discrete GaN power electronic devices have penetrated the consumer market and first products have amply demonstrated a disruptive improvement of the performance and reduction of the form factor. With demonstrated robustness for heavy ion radiation and neutron radiation, p-GaN enhancement mode HEMTs allow disruptive innovative designs for space applications. However, to unlock the full potential of the technology for point of load convertors, three important limitations need to be solved, as addressed in this project, i.e.
- the reduction of the inductive parasitics through monolithic integration of drivers and power devices (GaN-IC).
- optimization of the inductive passive components together with the active devices
- a strong interaction between point of load convertor design and GaN-IC design. Electrical performance and radiation robustness will be evaluated and assessed for space applications in the upcoming frame of satellites massive digitalization.
EleGaNT participated in the EU Space Week 2022 event
EleGaNT participated in the EU Space Week 2022 event ! Stefaan Decoutere presented EleGaNT project…
EleGaNT Leaflet Download
Interview with EleGaNT project coordinator
Interview with Mr Stefaan Decoutere, project coordinator of EleGaNT : IMEC’s Ganic roadmap Following the publication on IMEC’s extended GaN-IC…
200mm/8-Inch GaN Power Device and GaN-IC Technology to Unleash Your Power IC Technology
Presentation given by Denis Marcon, Senior Business Development Manager, at IMEC. Today, GaN-on-Si is well accepted as a break-through power…
The consortium is composed of 5 partners. These partners include actors in subsystem development, research, integration, innovation and technology transfer.
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