Discrete GaN power electronic devices have penetrated the consumer market and first products have amply demonstrated a disruptive improvement of the performance and reduction of the form factor. With demonstrated robustness for heavy ion radiation and neutron radiation, p-GaN enhancement mode HEMTs allow disruptive innovative designs for space applications. However, to unlock the full potential of the technology for point of load convertors, three important limitations need to be solved, as addressed in this project, i.e.
- the reduction of the inductive parasitics through monolithic integration of drivers and power devices (GaN-IC).
- optimization of the inductive passive components together with the active devices
- a strong interaction between point of load convertor design and GaN-IC design. Electrical performance and radiation robustness will be evaluated and assessed for space applications in the upcoming frame of satellites massive digitalization.
GaN half-bridge integrated circuits for power convertors, written by marc Fossion, Paul Maynadier, Deniz Aygün, Stefaan Decoutere and Valérie Schillemans,…
Generalized Automated Tool for Analysis and Design of Multiphase Coupled Inductor Buck Converter, written by Rana Asad Ali, Mahmoud Shousha…
The consortium is composed of 5 partners. These partners include actors in subsystem development, research, integration, innovation and technology transfer.
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